Technische Details SI1428EDH-T1-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70, Mounting: SMD, Drain current: 4A, On-state resistance: 45mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.8W, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 4nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Case: SC70, Drain-source voltage: 30V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SI1428EDH-T1-GE3
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SI1428EDH-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI1428EDH-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |