auf Bestellung 8670 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
37+ | 1.43 EUR |
43+ | 1.21 EUR |
100+ | 0.85 EUR |
500+ | 0.66 EUR |
1000+ | 0.54 EUR |
3000+ | 0.46 EUR |
9000+ | 0.42 EUR |
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Technische Details SI1900DL-T1-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A, Type of transistor: N-MOSFET x2, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.63A, Pulsed drain current: 1A, Power dissipation: 0.3W, Case: SC70-6; SOT363, Gate-source voltage: ±20V, On-state resistance: 0.7Ω, Mounting: SMD, Gate charge: 1.4nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI1900DL-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI1900DL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1900DL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |