SI4463BDY-E3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.1A; 3W; SO8
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -11.1A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.1A; 3W; SO8
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -11.1A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1219 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.22 EUR |
62+ | 1.16 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
500+ | 0.87 EUR |
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Technische Details SI4463BDY-E3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -11.1A; 3W; SO8, Power dissipation: 3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 56nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Mounting: SMD, Case: SO8, Drain-source voltage: -20V, Drain current: -11.1A, On-state resistance: 20mΩ, Type of transistor: P-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SI4463BDY-E3 nach Preis ab 0.87 EUR bis 1.22 EUR
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SI4463BDY-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11.1A; 3W; SO8 Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SO8 Drain-source voltage: -20V Drain current: -11.1A On-state resistance: 20mΩ Type of transistor: P-MOSFET |
auf Bestellung 1219 Stücke: Lieferzeit 14-21 Tag (e) |
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