
SI4463BDY-E3 VISHAY

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.8A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
5+ | 14.30 EUR |
18+ | 3.98 EUR |
47+ | 1.52 EUR |
500+ | 0.89 EUR |
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Technische Details SI4463BDY-E3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A, Type of transistor: P-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -9.8A, Pulsed drain current: -50A, Power dissipation: 3W, Case: SO8, Gate-source voltage: ±12V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 56nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SI4463BDY-E3 nach Preis ab 23.84 EUR bis 23.84 EUR
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SI4463BDY-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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