SI4490DY-E3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Technology: TrenchFET®, Polarisation: unipolar, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Case: SO8, Kind of package: reel; tape, Gate charge: 42nC, On-state resistance: 90mΩ, Power dissipation: 3.1W, Drain current: 3.2A, Gate-source voltage: ±20V, Drain-source voltage: 200V.