Produkte > VISHAY > SI4490DY-E3

SI4490DY-E3 VISHAY

pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C727DBC5F0469&compId=SI4490DY-E3.pdf?ci_sign=f612db75eeba4637e85f7093b3dabe03e0193e5b

Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 90mΩ
Power dissipation: 3.1W
Drain current: 3.2A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Case: SO8

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Technische Details SI4490DY-E3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Technology: TrenchFET®, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 42nC, On-state resistance: 90mΩ, Power dissipation: 3.1W, Drain current: 3.2A, Gate-source voltage: ±20V, Drain-source voltage: 200V, Case: SO8.