SI4490DY-E3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8
Case: SO8
Drain-source voltage: 200V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details SI4490DY-E3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Case: SO8, Drain-source voltage: 200V, Drain current: 3.2A, On-state resistance: 90mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.1W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 42nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±20V, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
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SI4490DY-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8 Case: SO8 Drain-source voltage: 200V Drain current: 3.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |