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SI4490DY-E3

SI4490DY-E3 VISHAY

SI4490DY-E3.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 42nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 90mΩ
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Technische Details SI4490DY-E3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Mounting: SMD, Power dissipation: 3.1W, Gate charge: 42nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 3.2A, Kind of channel: enhancement, Drain-source voltage: 200V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SO8, On-state resistance: 90mΩ.