SI4490DY-E3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 90mΩ
Power dissipation: 3.1W
Drain current: 3.2A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Case: SO8
Anzahl je Verpackung: 1 Stücke
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Technische Details SI4490DY-E3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Technology: TrenchFET®, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 42nC, On-state resistance: 90mΩ, Power dissipation: 3.1W, Drain current: 3.2A, Gate-source voltage: ±20V, Drain-source voltage: 200V, Case: SO8, Anzahl je Verpackung: 1 Stücke.
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SI4490DY-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8 Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC On-state resistance: 90mΩ Power dissipation: 3.1W Drain current: 3.2A Gate-source voltage: ±20V Drain-source voltage: 200V Case: SO8 |
Produkt ist nicht verfügbar |