Technische Details Si4940DY-T1-E3 VISHAY
Description: MOSFET 2N-CH 40V 4.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.2A, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC.
Weitere Produktangebote Si4940DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SI4940DYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si4940DY-T1-E3 | Hersteller : VISHAY |
 07+ SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si4940DY-T1-E3 | Hersteller : VISHAY |
SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4940DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 4.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC |
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