Technische Details SI4965DYT1E3 VISHAY
Description: MOSFET 2P-CH 8V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4965DYT1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SI4965DY-T1-E3 | Hersteller : VISHAY | 09+ QFN |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4965DY-T1-E3 | Hersteller : VISHAY | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4965DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 8V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 8-SOIC |
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