SIA777EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 20V/12V SC70-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 7.8W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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Technische Details SIA777EDJ-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V/12V SC70-6L, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5W, 7.8W, Drain to Source Voltage (Vdss): 20V, 12V, Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A, Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual.