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SIDC105D120H8X1SA1 Infineon Technologies


infineon-sidc105d120h8-datasheet-v01_10-en.pdf Hersteller: Infineon Technologies
Diode Switching 1.2KV 200A Wafer
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Technische Details SIDC105D120H8X1SA1 Infineon Technologies

Description: DIODE STANDARD 1.2KV 200A SAWN, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 200A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V.

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SIDC105D120H8X1SA1 SIDC105D120H8X1SA1 Hersteller : Infineon Technologies Infineon-SIDC105D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fa90e3f40 Description: DIODE STANDARD 1.2KV 200A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH