SIDC10D120H8X1SA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDC10D120H8X1SA2 Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 15A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.