SIDC81D60E6X1SA3 Infineon Technologies

Description: DIODE GP 600V 200A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 200A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V.