SIDC81D60E6X1SA3 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 600V 200A WAFER
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 200A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDC81D60E6X1SA3 Infineon Technologies
Description: DIODE GP 600V 200A WAFER, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 200A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C.