SIGC12T60NCX1SA5 Infineon Technologies

Description: IGBT 3 CHIP 600V WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: Die, IGBT Type: NPT, Td (on/off) @ 25°C: 21ns/110ns, Test Condition: 300V, 10A, 27Ohm, 15V, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A.