Technische Details SIHF620S-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 3.3A, Pulsed drain current: 18A, Power dissipation: 50W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 0.8Ω, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF620S-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHF620S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHF620S-GE3 | Hersteller : Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 200V |
Produkt ist nicht verfügbar |
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| SIHF620S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |