Technische Details SIHF620S-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W, Case: D2PAK; TO263, Mounting: SMD, Pulsed drain current: 18A, Power dissipation: 50W, Gate charge: 14nC, Polarisation: unipolar, Drain current: 3.3A, Kind of channel: enhanced, Drain-source voltage: 200V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 0.8Ω, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF620S-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIHF620S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W Case: D2PAK; TO263 Mounting: SMD Pulsed drain current: 18A Power dissipation: 50W Gate charge: 14nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.8Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHF620S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W Case: D2PAK; TO263 Mounting: SMD Pulsed drain current: 18A Power dissipation: 50W Gate charge: 14nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.8Ω |
Produkt ist nicht verfügbar |