Technische Details SIHF640L-GE3 Vishay Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 11A, Pulsed drain current: 72A, Power dissipation: 130W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 0.18Ω, Mounting: THT, Gate charge: 70nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote SIHF640L-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHF640L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
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