SIHF730STRL-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 74W
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Drain-source voltage: 400V
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 74W
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Drain-source voltage: 400V
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF730STRL-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W, Mounting: SMD, Case: D2PAK; TO263, Kind of package: reel; tape, Power dissipation: 74W, On-state resistance: 1Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 38nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 22A, Drain-source voltage: 400V, Drain current: 3.5A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF730STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SIHF730STRL-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
|
| SIHF730STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 74W On-state resistance: 1Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Drain-source voltage: 400V Drain current: 3.5A |
Produkt ist nicht verfügbar |