Technische Details SIHF730STRL-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W, Case: D2PAK; TO263, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 400V, Drain current: 3.5A, Pulsed drain current: 22A, Gate charge: 38nC, On-state resistance: 1Ω, Type of transistor: N-MOSFET, Power dissipation: 74W, Gate-source voltage: ±20V, Kind of channel: enhancement.
Weitere Produktangebote SIHF730STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHF730STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Pulsed drain current: 22A Gate charge: 38nC On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 74W Gate-source voltage: ±20V Kind of channel: enhancement |
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