Technische Details SIHF740STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W, Mounting: SMD, Case: D2PAK; TO263, Kind of package: reel; tape, Power dissipation: 125W, Polarisation: unipolar, Gate charge: 63nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 40A, Drain-source voltage: 400V, Drain current: 6.3A, On-state resistance: 0.55Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF740STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIHF740STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 125W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 400V Drain current: 6.3A On-state resistance: 0.55Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHF740STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 125W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 400V Drain current: 6.3A On-state resistance: 0.55Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |