SIHF830STRL-GE3 Vishay Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.9A, Pulsed drain current: 18A, Power dissipation: 74W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 1.5Ω, Mounting: SMD, Gate charge: 38nC, Kind of package: reel; tape, Kind of channel: enhancement.