Technische Details SIHF830STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.9A, Power dissipation: 74W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 1.5Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 38nC, Pulsed drain current: 18A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF830STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SIHF830STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 38nC Pulsed drain current: 18A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHF830STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 38nC Pulsed drain current: 18A |
Produkt ist nicht verfügbar |