SIHF830STRL-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 38nC
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 38nC
Pulsed drain current: 18A
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Technische Details SIHF830STRL-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.9A, Power dissipation: 74W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 1.5Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 38nC, Pulsed drain current: 18A.