Technische Details SIHF830STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.9A, Pulsed drain current: 18A, Power dissipation: 74W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 1.5Ω, Mounting: SMD, Gate charge: 38nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF830STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHF830STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| SIHF830STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |