SIHF840AS-GE3 Vishay / Siliconix

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 5.1A, Pulsed drain current: 32A, Power dissipation: 125W, Case: D2PAK; TO263, Gate-source voltage: ±30V, On-state resistance: 0.85Ω, Mounting: SMD, Gate charge: 38nC, Kind of package: reel; tape, Kind of channel: enhancement.