Technische Details SIHFBE30L-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 2.6A, Pulsed drain current: 16A, Power dissipation: 125W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 3Ω, Mounting: THT, Gate charge: 78nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFBE30L-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHFBE30L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFBE30L-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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| SIHFBE30L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |