Technische Details SIHFBE30L-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W, Mounting: THT, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Power dissipation: 125W, Case: I2PAK; TO262, Kind of package: tube, Gate charge: 78nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 16A, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 2.6A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFBE30L-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHFBE30L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Mounting: THT On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 125W Case: I2PAK; TO262 Kind of package: tube Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIHFBE30L-GE3 | Hersteller : Vishay / Siliconix | MOSFETs |
Produkt ist nicht verfügbar |
|
| SIHFBE30L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Mounting: THT On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 125W Case: I2PAK; TO262 Kind of package: tube Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A |
Produkt ist nicht verfügbar |