Technische Details SIHFR010-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 8.2A, Pulsed drain current: 33A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.2Ω, Mounting: SMD, Gate charge: 10nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote SIHFR010-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHFR010-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 8.2A Pulsed drain current: 33A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10nC Kind of package: tube Kind of channel: enhancement |
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