Technische Details SIHFR310-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252, Drain-source voltage: 400V, Drain current: 1.1A, On-state resistance: 3.6Ω, Type of transistor: N-MOSFET, Power dissipation: 25W, Polarisation: unipolar, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Gate charge: 12nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 6A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR310-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHFR310-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR310-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.1A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
Produkt ist nicht verfügbar |