SIHFR9014TR-GE3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details SIHFR9014TR-GE3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W, Pulsed drain current: -20A, Power dissipation: 25W, Gate charge: 12nC, Polarisation: unipolar, Drain current: -3.2A, Kind of channel: enhanced, Drain-source voltage: -60V, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: DPAK; TO252, On-state resistance: 0.5Ω, Gate-source voltage: ±20V, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR9014TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |