Technische Details SIHFR9120TR-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -5.6A, Pulsed drain current: -22A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.6Ω, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9120TR-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHFR9120TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR9120TR-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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SIHFR9120TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |