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SIHFR9120TR-GE3 Vishay Semiconductors



Hersteller: Vishay Semiconductors
MOSFETs MOSFET P-CHANNEL 100V
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Technische Details SIHFR9120TR-GE3 Vishay Semiconductors

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -5.6A, Pulsed drain current: -22A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.6Ω, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote SIHFR9120TR-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SIHFR9120TR-GE3 SIHFR9120TR-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR9120TR-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH