Technische Details SIHFU020-GE3 Vishay Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; IPAK,TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 9A, Pulsed drain current: 56A, Power dissipation: 42W, Case: IPAK; TO251, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: THT, Gate charge: 25nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote SIHFU020-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHFU020-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 56A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
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