SIHL530STRR-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 60A; 88W, Mounting: SMD, Case: D2PAK; TO263, Kind of package: reel; tape, Power dissipation: 88W, On-state resistance: 0.22Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 28nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 60A, Drain-source voltage: 100V, Drain current: 11A, Anzahl je Verpackung: 1 Stücke.