SIHL640STRL-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W, Mounting: SMD, Case: D2PAK; TO263, Kind of package: reel; tape, Power dissipation: 125W, Polarisation: unipolar, Gate charge: 66nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 68A, Drain-source voltage: 200V, Drain current: 11A, On-state resistance: 0.27Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.