Produkte > VISHAY > SIHLR024TRL-GE3

SIHLR024TRL-GE3 VISHAY

Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.14Ω
Pulsed drain current: 56A
Gate charge: 18nC
Gate-source voltage: ±10V

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Technische Details SIHLR024TRL-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; Idm: 56A; 42W; DPAK,TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 9.2A, Power dissipation: 42W, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, On-state resistance: 0.14Ω, Pulsed drain current: 56A, Gate charge: 18nC, Gate-source voltage: ±10V.