Technische Details SIHLU120-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 4.9A, Pulsed drain current: 31A, Power dissipation: 42W, Case: IPAK; TO251, Gate-source voltage: ±10V, On-state resistance: 0.38Ω, Mounting: THT, Gate charge: 12nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHLU120-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHLU120-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHLU120-GE3 | Hersteller : Vishay / Siliconix | MOSFETs |
Produkt ist nicht verfügbar |
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| SIHLU120-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |