Suchergebnisse für "sir870bdp" : 14
Art der Ansicht :
Mindestbestellmenge: 6
Mindestbestellmenge: 3000
Mindestbestellmenge: 77
Mindestbestellmenge: 50
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIR870BDP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 100 V |
auf Bestellung 5895 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870BDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 18.8A/81A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V |
auf Bestellung 10021 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870BDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 18.8A/81A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870BDP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR870BDP-T1-RE3 | VISHAY |
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 81A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0048ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 5558 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR870BDP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR870BDP-T1-RE3 | VISHAY |
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 81A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0048ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 5558 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR870BDP | Vishay | Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR870BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIR870BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR870BDP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR870BDP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR870BDP-T1-UE3 | Vishay | MOSFET |
Produkt ist nicht verfügbar |
SIR870BDP-T1-RE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 100 V
MOSFET N-CHANNEL 100 V
auf Bestellung 5895 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.29 EUR |
10+ | 2.76 EUR |
100+ | 2.22 EUR |
250+ | 2.13 EUR |
500+ | 1.9 EUR |
1000+ | 1.63 EUR |
SIR870BDP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 10021 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
10+ | 2.9 EUR |
100+ | 2.31 EUR |
500+ | 1.95 EUR |
1000+ | 1.66 EUR |
SIR870BDP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.57 EUR |
6000+ | 1.51 EUR |
9000+ | 1.46 EUR |
SIR870BDP-T1-RE3 |
Hersteller: Vishay
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 2.05 EUR |
83+ | 1.82 EUR |
84+ | 1.74 EUR |
85+ | 1.65 EUR |
100+ | 1.43 EUR |
250+ | 1.33 EUR |
500+ | 1.19 EUR |
1000+ | 1.15 EUR |
SIR870BDP-T1-RE3 |
Hersteller: VISHAY
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 81A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (19-Jan-2021)
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 81A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (19-Jan-2021)
auf Bestellung 5558 Stücke:
Lieferzeit 14-21 Tag (e)SIR870BDP-T1-RE3 |
Hersteller: Vishay
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 3.13 EUR |
60+ | 2.54 EUR |
100+ | 1.97 EUR |
250+ | 1.81 EUR |
500+ | 1.55 EUR |
1000+ | 1.41 EUR |
SIR870BDP-T1-RE3 |
Hersteller: VISHAY
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 81A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (19-Jan-2021)
Description: VISHAY - SIR870BDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 81A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (19-Jan-2021)
auf Bestellung 5558 Stücke:
Lieferzeit 14-21 Tag (e)SIR870BDP |
Hersteller: Vishay
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR870BDP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIR870BDP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR870BDP-T1-RE3 |
Hersteller: Vishay
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR870BDP-T1-RE3 |
Hersteller: Vishay
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 18.8A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar