SK 35 GD 126 ET 24910230 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw
Case: SEMITOP3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SK 35 GD 126 ET 24910230 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw, Case: SEMITOP3, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 35A, Pulsed collector current: 70A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge OE output; thermistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SK 35 GD 126 ET 24910230
Foto | Bezeichnung | Hersteller | Beschreibung |
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SK 35 GD 126 ET 24910230 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw Case: SEMITOP3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Pulsed collector current: 70A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge OE output; thermistor |
Produkt ist nicht verfügbar |