SK 35 GD 126 ET 24910230 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Case: SEMITOP3
Collector current: 35A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Topology: IGBT three-phase bridge OE output; thermistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SK 35 GD 126 ET 24910230 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Case: SEMITOP3, Collector current: 35A, Pulsed collector current: 70A, Gate-emitter voltage: ±20V, Max. off-state voltage: 1.2kV, Topology: IGBT three-phase bridge OE output; thermistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SK 35 GD 126 ET 24910230
Foto | Bezeichnung | Hersteller | Beschreibung |
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SK 35 GD 126 ET 24910230 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-in PCB Case: SEMITOP3 Collector current: 35A Pulsed collector current: 70A Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Topology: IGBT three-phase bridge OE output; thermistor |
Produkt ist nicht verfügbar |