Produkte > SEMIKRON DANFOSS > SK 60 GB 125 24910770

SK 60 GB 125 24910770 SEMIKRON DANFOSS

Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: SEMITOP3
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Mechanical mounting: screw

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Technische Details SK 60 GB 125 24910770 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 100A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Semiconductor structure: transistor/transistor, Case: SEMITOP3, Gate-emitter voltage: ±20V, Collector current: 50A, Topology: IGBT half-bridge; NTC thermistor, Type of semiconductor module: IGBT, Mechanical mounting: screw.