
SK 60 GB 125 24910770 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: SEMITOP3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 105.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SK 60 GB 125 24910770 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Case: SEMITOP3, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 100A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Topology: IGBT half-bridge; NTC thermistor, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SK 60 GB 125 24910770 nach Preis ab 105.96 EUR bis 105.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
---|---|---|---|---|---|---|---|---|---|
![]() |
SK 60 GB 125 24910770 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: SEMITOP3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|