Produkte > SEMIKRON DANFOSS > SKIIP 02NAC12T4V1 25232530

SKIIP 02NAC12T4V1 25232530 SEMIKRON DANFOSS

SKiiP02NAC12T4V1.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 4A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 4A
Case: MiniSKiiP® 0
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mechanical mounting: screw
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Technische Details SKIIP 02NAC12T4V1 25232530 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 4A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 4A, Case: MiniSKiiP® 0, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 12A, Mechanical mounting: screw.