Produkte > SEMIKRON DANFOSS > SKIIP 02NEB066V3 25232300

SKIIP 02NEB066V3 25232300 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F8FFF9762120C4&compId=SKIIP02NEB066V3.pdf?ci_sign=e2ceffc584d2d78c30fab3a23ee453e0e3bb33fd pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 0
Power: 2.2kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SKIIP 02NEB066V3 25232300 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A, Collector current: 10A, Pulsed collector current: 20A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 0, Power: 2.2kW, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKIIP 02NEB066V3 25232300

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SKIIP 02NEB066V3 25232300 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F8FFF9762120C4&compId=SKIIP02NEB066V3.pdf?ci_sign=e2ceffc584d2d78c30fab3a23ee453e0e3bb33fd pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 0
Power: 2.2kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH