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SKIIP 02NEB066V3 25232300 SEMIKRON DANFOSS


SKIIP02NEB066V3.pdf SEMIKRON_Product_Variants.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 10A
Power: 2.2kW
Case: MiniSKiiP® 0
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 02NEB066V3 25232300 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 10A, Power: 2.2kW, Case: MiniSKiiP® 0, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 20A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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SKIIP 02NEB066V3 25232300 Hersteller : SEMIKRON DANFOSS SKIIP02NEB066V3.pdf SEMIKRON_Product_Variants.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 10A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 10A
Power: 2.2kW
Case: MiniSKiiP® 0
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mechanical mounting: screw
Produkt ist nicht verfügbar