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SKIIP 11AC12T4V1 25231610 SEMIKRON DANFOSS


SKIIP11AC12T4V1.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Pulsed collector current: 24A
Case: MiniSKiiP® 1
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 8A
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 11AC12T4V1 25231610 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Pulsed collector current: 24A, Case: MiniSKiiP® 1, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge OE output; thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 8A, Anzahl je Verpackung: 1 Stücke.

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SKIIP 11AC12T4V1 25231610 Hersteller : SEMIKRON DANFOSS SKIIP11AC12T4V1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Pulsed collector current: 24A
Case: MiniSKiiP® 1
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 8A
Produkt ist nicht verfügbar