SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Case: MiniSKiiP® 1, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/thyristor/IGBT, Gate-emitter voltage: ±20V, Collector current: 15A, Pulsed collector current: 30A, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SKIIP 11HEB066V1 25230830 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge Case: MiniSKiiP® 1 Max. off-state voltage: 0.6kV Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A |
Produkt ist nicht verfügbar |