SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Semiconductor structure: diode/thyristor/IGBT
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 11HEB066V1 25230830 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 15A, Pulsed collector current: 30A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Semiconductor structure: diode/thyristor/IGBT, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKIIP 11HEB066V1 25230830
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SKIIP 11HEB066V1 25230830 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 15A Pulsed collector current: 30A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge Semiconductor structure: diode/thyristor/IGBT Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 1 |
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