Produkte > SEMIKRON DANFOSS > SKIIP 11NAB12T4V1 25231580
SKIIP 11NAB12T4V1 25231580

SKIIP 11NAB12T4V1 25231580 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FAF73ADC0560C4&compId=SKIIP11NAB12T4V1.pdf?ci_sign=8b6de0aaa5f5463b44013b07ec0f54eceb5fa7b7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 8A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mechanical mounting: screw
Power: 4kW
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 11NAB12T4V1 25231580 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 8A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 8A, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 24A, Mechanical mounting: screw, Power: 4kW, Anzahl je Verpackung: 1 Stücke.

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SKIIP 11NAB12T4V1 25231580 SKIIP 11NAB12T4V1 25231580 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FAF73ADC0560C4&compId=SKIIP11NAB12T4V1.pdf?ci_sign=8b6de0aaa5f5463b44013b07ec0f54eceb5fa7b7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 8A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mechanical mounting: screw
Power: 4kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH