SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/thyristor/IGBT
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Collector current: 15A, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/thyristor/IGBT, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKIIP 12HEB066V1 25230840
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SKIIP 12HEB066V1 25230840 | Hersteller : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V Collector current: 15A Case: MiniSKiiP® 1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge Max. off-state voltage: 0.6kV Semiconductor structure: diode/thyristor/IGBT Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit |
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