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SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS


SKIIP12HEB066V1.pdf SEMIKRON_Product_Variants.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/thyristor/IGBT
Max. off-state voltage: 0.6kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Collector current: 15A, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Semiconductor structure: diode/thyristor/IGBT, Max. off-state voltage: 0.6kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 1 Stücke.

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SKIIP 12HEB066V1 25230840 Hersteller : SEMIKRON DANFOSS SKIIP12HEB066V1.pdf SEMIKRON_Product_Variants.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/thyristor/IGBT
Max. off-state voltage: 0.6kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar