SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Pulsed collector current: 40A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Collector current: 15A, Pulsed collector current: 40A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/thyristor/IGBT, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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SKIIP 12HEB066V1 25230840 | Hersteller : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V Collector current: 15A Pulsed collector current: 40A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge Type of semiconductor module: IGBT Case: MiniSKiiP® 1 Max. off-state voltage: 0.6kV Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V |
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