Produkte > SEMIKRON DANFOSS > SKIIP 12HEB066V1 25230840
SKIIP 12HEB066V1 25230840
  • SKIIP 12HEB066V1 25230840
  • SKIIP 12HEB066V1 25230840

SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS


SKIIP12HEB066V1.pdf SEMIKRON_Product_Variants.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Case: MiniSKiiP® 1
Semiconductor structure: diode/thyristor/IGBT
Electrical mounting: Press-Fit
Type of semiconductor module: IGBT
auf Bestellung 119 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+51.74 EUR
3+45.69 EUR
8+41.06 EUR
Mindestbestellmenge: 2
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Technische Details SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Collector current: 15A, Pulsed collector current: 40A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Case: MiniSKiiP® 1, Semiconductor structure: diode/thyristor/IGBT, Electrical mounting: Press-Fit, Type of semiconductor module: IGBT.