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SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FB142DCEA260C4&compId=SKIIP12HEB066V1.pdf?ci_sign=e318f4bc4b631208ad90190e1b5bca4444cd4991 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Pulsed collector current: 40A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Collector current: 15A, Pulsed collector current: 40A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/thyristor/IGBT, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

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SKIIP 12HEB066V1 25230840 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FB142DCEA260C4&compId=SKIIP12HEB066V1.pdf?ci_sign=e318f4bc4b631208ad90190e1b5bca4444cd4991 Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Pulsed collector current: 40A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH