Produkte > SEMIKRON DANFOSS > SKIIP 24NAB12T4V1 25231420

SKIIP 24NAB12T4V1 25231420 SEMIKRON DANFOSS


SKIIP24NAB12T4V1.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Power: 11kW
Electrical mounting: Press-Fit
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 2
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 105A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
auf Bestellung 70 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+254.83 EUR
3+225.22 EUR
8+202.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SKIIP 24NAB12T4V1 25231420 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Power: 11kW, Electrical mounting: Press-Fit, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 2, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 35A, Pulsed collector current: 105A, Max. off-state voltage: 1.2kV, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor.