Produkte > SEMIKRON DANFOSS > SKIIP 24NAB12T4V1 25231420
SKIIP 24NAB12T4V1 25231420

SKIIP 24NAB12T4V1 25231420 SEMIKRON DANFOSS

SKIIP24NAB12T4V1.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Collector current: 35A
Case: MiniSKiiP® 2
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Electrical mounting: Press-Fit
Power: 11kW
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
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Technische Details SKIIP 24NAB12T4V1 25231420 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Collector current: 35A, Case: MiniSKiiP® 2, Gate-emitter voltage: ±20V, Pulsed collector current: 105A, Electrical mounting: Press-Fit, Power: 11kW, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV.