Produkte > SEMIKRON DANFOSS > SKIIP 24NAB12T4V10 25231560

SKIIP 24NAB12T4V10 25231560 SEMIKRON DANFOSS

SKIIP24NAB12T4V10.pdf SEMIKRON_Product_Variants.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 2
Power: 11kW
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 105A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-Fit
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Technische Details SKIIP 24NAB12T4V10 25231560 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Mechanical mounting: screw, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 2, Power: 11kW, Gate-emitter voltage: ±20V, Collector current: 35A, Pulsed collector current: 105A, Max. off-state voltage: 1.2kV, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Electrical mounting: Press-Fit.