SKIIP 26NAB066V1 25230630 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 50A
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 50A
Pulsed collector current: 100A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 5.5kW
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 2
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 26NAB066V1 25230630 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 50A, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 50A, Pulsed collector current: 100A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 5.5kW, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 2, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKIIP 26NAB066V1 25230630
Foto | Bezeichnung | Hersteller | Beschreibung |
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SKIIP 26NAB066V1 25230630 | Hersteller : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 50A Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 50A Pulsed collector current: 100A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Power: 5.5kW Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 2 |
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