Produkte > SEMIKRON DANFOSS > SKIIP 37NAB12T7V1 25232090

SKIIP 37NAB12T7V1 25232090 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CB011A1F2C640D6&compId=SKIIP37NAB12T7V1.pdf?ci_sign=6dc41761f309824b3b37e6a43ea8f1687347d0d0 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SKIIP 37NAB12T7V1 25232090 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 75A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mechanical mounting: screw.