Produkte > SEMIKRON DANFOSS > SKIIP 38GAL12E4V1 25241239

SKIIP 38GAL12E4V1 25241239 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw

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Technische Details SKIIP 38GAL12E4V1 25241239 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw.