Produkte > SEMIKRON DANFOSS > SKIIP 39GB12E4V1 M20 25241221

SKIIP 39GB12E4V1 M20 25241221 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA96A69543DCD000C4&compId=SKIIP39GB12E4V1.pdf?ci_sign=fed5d28e7621caff73fc088a8146b6c9c64b6392 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Case: MiniSKiiP® 3
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
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Technische Details SKIIP 39GB12E4V1 M20 25241221 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A, Electrical mounting: Press-Fit, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; NTC thermistor, Case: MiniSKiiP® 3, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 400A, Pulsed collector current: 1.2kA, Max. off-state voltage: 1.2kV.