Produkte > SEMIKRON DANFOSS > SKIIP 39GB12E4V1 M20 25241221

SKIIP 39GB12E4V1 M20 25241221 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw

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Technische Details SKIIP 39GB12E4V1 M20 25241221 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 400A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 1.2kA, Mechanical mounting: screw.