Produkte > SEMIKRON DANFOSS > SKM150GB07E3 22895636

SKM150GB07E3 22895636 SEMIKRON DANFOSS


SKM150GB07E3.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 150A
Case: SEMITRANS2
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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Technische Details SKM150GB07E3 22895636 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 650V, Collector current: 150A, Case: SEMITRANS2, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw.