Produkte > SEMIKRON DANFOSS > SKM200GB17E4 22895060
SKM200GB17E4 22895060

SKM200GB17E4 22895060 SEMIKRON DANFOSS


SKM200GB17E4.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Version: D56
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SKM200GB17E4 22895060 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS3, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Version: D56, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM200GB17E4 22895060

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SKM200GB17E4 22895060 SKM200GB17E4 22895060 Hersteller : SEMIKRON DANFOSS SKM200GB17E4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Version: D56
Produkt ist nicht verfügbar