Produkte > SEMIKRON DANFOSS > SKM300GB126D 22890633
SKM300GB126D 22890633

SKM300GB126D 22890633 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB752F1EE586FC652FECC54469&compId=SKM300GB126D.pdf?ci_sign=6171a33f0b75294d24c57231c2f1033c64346ef9 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SEMITRANS3
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+316.32 EUR
8+304.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SKM300GB126D 22890633 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SEMITRANS3, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM300GB126D 22890633 nach Preis ab 304.15 EUR bis 316.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SKM300GB126D 22890633 SKM300GB126D 22890633 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB752F1EE586FC652FECC54469&compId=SKM300GB126D.pdf?ci_sign=6171a33f0b75294d24c57231c2f1033c64346ef9 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SEMITRANS3
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+316.32 EUR
8+304.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH