SKM50GD125D 21918010 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Version: D67
Topology: IGBT three-phase bridge
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 100A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMITRANS6
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 312.97 EUR |
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Technische Details SKM50GD125D 21918010 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Version: D67, Topology: IGBT three-phase bridge, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 100A, Electrical mounting: FASTON connectors, Mechanical mounting: screw, Collector current: 50A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Case: SEMITRANS6, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKM50GD125D 21918010 nach Preis ab 312.97 EUR bis 312.97 EUR
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SKM50GD125D 21918010 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Version: D67 Topology: IGBT three-phase bridge Application: for UPS; Inverter; photovoltaics Pulsed collector current: 100A Electrical mounting: FASTON connectors Mechanical mounting: screw Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: SEMITRANS6 Type of semiconductor module: IGBT |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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