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SKM50GD125D 21918010 SEMIKRON DANFOSS


SKM50GD125D.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SEMITRANS6
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Version: D67
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Technische Details SKM50GD125D 21918010 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Collector current: 50A, Case: SEMITRANS6, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Mechanical mounting: screw, Version: D67.