SKM50GD125D 21918010 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SEMITRANS6
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Version: D67
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 420.85 EUR |
| 3+ | 379.66 EUR |
| 5+ | 334.62 EUR |
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Technische Details SKM50GD125D 21918010 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Collector current: 50A, Case: SEMITRANS6, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Mechanical mounting: screw, Version: D67, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKM50GD125D 21918010 nach Preis ab 334.62 EUR bis 420.85 EUR
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SKM50GD125D 21918010 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: SEMITRANS6 Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 100A Mechanical mounting: screw Version: D67 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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