SP000089223 Infineon Technologies

Description: P-CHANNEL POWER MOSFET, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Part Status: Active, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 2V @ 130µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V.