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SPA02N80C3XKSA1 Infineon Technologies

SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220FP Tube
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Technische Details SPA02N80C3XKSA1 Infineon Technologies

Description: MOSFET N-CH 800V 2A TO220-FP, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-3-31, Vgs(th) (Max) @ Id: 3.9V @ 120µA, Power Dissipation (Max): 30.5W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel.

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SPA02N80C3XKSA1 SPA02N80C3XKSA1 Infineon Technologies SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4 Description: MOSFET N-CH 800V 2A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA02N80C3XKSA1 Infineon Technologies SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4 Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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SPA02N80C3XKSA1 SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4
SPA02N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA02N80C3XKSA1 SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH