SPA20N65C3XK Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SPA20N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 88+ | 5.47 EUR |
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Technische Details SPA20N65C3XK Infineon Technologies
Description: SPA20N65 - 650V AND 700V COOLMOS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V, Power Dissipation (Max): 34.5W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.