auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.02 EUR |
| 2000+ | 0.96 EUR |
| 5000+ | 0.92 EUR |
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Technische Details SPB18P06P G Infineon Technologies
Description: SPB18P06 - 20V-250V P-CHANNEL PO, Packaging: Bulk, Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Power Dissipation (Max): 81.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO263-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Weitere Produktangebote SPB18P06P G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SPB18P06PG | Hersteller : Infineon technologies |
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auf Bestellung 587 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB18P06PG | Hersteller : Infineon Technologies |
Description: SPB18P06 - 20V-250V P-CHANNEL PO Packaging: Bulk Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Power Dissipation (Max): 81.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO263-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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